TSM1N80CW RPG
TSM1N80CW RPG
Part Number TSM1N80CW RPG Description MOSFET N-CH 800V 300MA SOT223 Package / Case TO-261-4, TO-261AAUnit Price Request a QuoteLead Time To be ConfirmedDetailed Description N-Channel 800V 300mA (Ta) 2.1W (Tc) Surface Mount SOT-223
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TSM1N80CW RPG - Product Attributes
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Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single
Datasheet TSM1N80 Standard Package 1 Manufacturer Taiwan Semiconductor Corporation Series - Packaging Cut Tape (CT) Part Status Active FET Type N-Channel Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 800V Current - Continuous Drain (Id) @ 25°C 300mA (Ta) Drive Voltage (Max Rds On, Min Rds On) 10V Rds On (Max) @ Id, Vgs 21.6Ohm @ 150mA, 10V Vgs(th) (Max) @ Id 5V @ 250µA Gate Charge (Qg) (Max) @ Vgs 6nC @ 10V Vgs (Max) ±30V Input Capacitance (Ciss) (Max) @ Vds 200pF @ 25V FET Feature - Power Dissipation (Max) 2.1W (Tc) Operating Temperature -55°C ~ 150°C (TJ) Mounting Type Surface Mount Supplier Device Package SOT-223 Package / Case TO-261-4, TO-261AA
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