TSM1N80CW RPG
TSM1N80CW RPG
Part Number TSM1N80CW RPG
Description MOSFET N-CH 800V 300MA SOT223
Package / Case TO-261-4, TO-261AA
Unit Price Request a Quote
Lead Time To be Confirmed
Detailed Description N-Channel 800V 300mA (Ta) 2.1W (Tc) Surface Mount SOT-223
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TSM1N80CW RPG - Product Attributes
Categories
Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single
Datasheet TSM1N80
Standard Package 1
Manufacturer Taiwan Semiconductor Corporation
Series -
Packaging Cut Tape (CT)
Part Status Active
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 800V
Current - Continuous Drain (Id) @ 25°C 300mA (Ta)
Drive Voltage (Max Rds On, Min Rds On) 10V
Rds On (Max) @ Id, Vgs 21.6Ohm @ 150mA, 10V
Vgs(th) (Max) @ Id 5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 6nC @ 10V
Vgs (Max) ±30V
Input Capacitance (Ciss) (Max) @ Vds 200pF @ 25V
FET Feature -
Power Dissipation (Max) 2.1W (Tc)
Operating Temperature -55°C ~ 150°C (TJ)
Mounting Type Surface Mount
Supplier Device Package SOT-223
Package / Case TO-261-4, TO-261AA
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